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Ultrafast field-dependent response of bandedge photogenerated electrons in quantum-well structures

✍ Scribed by Joshi, R.P.; Grondin, R.O.; El-Ghazaly, S.M.

Book ID
117867067
Publisher
IEEE
Year
1992
Tongue
English
Weight
858 KB
Volume
28
Category
Article
ISSN
0018-9197

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We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the