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Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

✍ Scribed by Schoenberg, J.S.H.; Burger, J.W.; Tyo, J.S.; Abdalla, M.D.; Skipper, M.C.; Buchwald, W.R.


Book ID
117862938
Publisher
IEEE
Year
1997
Tongue
English
Weight
150 KB
Volume
25
Category
Article
ISSN
0093-3813

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over the cross section of the nanowire which is embedded in vacuum. We solve this equation numerically [13] for a nanowire 30 nm in size (side dimension) illuminated by an incident field of wavelength Ο­ 400 nm, with the electric-field vector perpendicular to the axis of the nanowire. In Table 1, we