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High power, longevity gallium arsenide photoconductive semiconductor switches

โœ Scribed by HongChun Yang; HaiJuan Cui; YunQing Sun; Gang Zeng; MingHe Wu


Book ID
107372001
Publisher
Springer
Year
2010
Tongue
English
Weight
669 KB
Volume
55
Category
Article
ISSN
1001-6538

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Chemical shifts of GaAs and InGaAs were observed by solid-state h&h-resolution NMR. The spectrum of GaAs appeared as a single peak but that of InGaAs consisted of an intense narrow peak and a weak broad one which appeared at =10-U ppm slightly higher field from the former.