𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ultra-Low-Noise 1.2- to 1.7-GHz Cooled GaAsFET Amplifiers

✍ Scribed by Weinreb, S.; Fenstermacher, D.L.; Harris, R.W.


Book ID
114657962
Publisher
IEEE
Year
1982
Tongue
English
Weight
780 KB
Volume
30
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


1.8-V 3.1–10.6-GHz CMOS low-noise amplif
✍ Yang Lu; Kiat Seng Yeo; Jian Guo Ma; Manh Anh Do; Zhenghao Lu πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 141 KB

## Abstract A novel CMOS low‐noise amplifier (LNA) for 3.1–10.6‐GHz ultra‐wideband (UWB) applications is presented in this paper. As opposed to most of the previously reported UWB LNAs, which are based on SiGe technology, the proposed UWB LNA is designed based on chartered semiconductor manufacturi

A low noise 3.1 10.6 GHz pMOS distribute
✍ Chien-Cheng Wei; Hsien-Chin Chiu; Wu-Shiung Feng πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 249 KB

## Abstract A low noise pMOS distributed amplifier for Ultra‐wideband (UWB) application is presented in this study. The amplifier is a two‐stage design fabricated in a standard 0.18‐μm CMOS process. The pMOS‐based distributed amplifier as input stage is used to achieve a better noise figure and a w