Ultra-low density InAs quantum dots
β Scribed by Dubrovskii, V. G.; Cirlin, G. E.; Brunkov, P. A.; Perimetti, U.; Akopyan, N.
- Book ID
- 121362059
- Publisher
- Springer
- Year
- 2013
- Tongue
- English
- Weight
- 405 KB
- Volume
- 47
- Category
- Article
- ISSN
- 1063-7826
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## Abstract Highlyβstacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strainβcompensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2βΓβ10^13^/cm^2^; this value cannot be obtained using conventional QD fabr
## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA