Fabrication of ultra-high-density InAs quantum dots using the strain-compensation technique

✍ Scribed by Akahane, Kouichi ;Yamamoto, Naokatsu ;Kawanishi, Tetsuya

• Book ID: 105366001
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 474 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201000432

✦ Synopsis

Abstract

Highly‐stacked InAs quantum dots (QDs) were successfully grown on InP(311)B substrates using a novel strain‐compensation technique. The number of stacked layer was increased to 300, the density of the QDs reaches 2 × 10^13^/cm^2^; this value cannot be obtained using conventional QD fabrication techniques. In a highly stacked sample, the QDs show good size uniformity with a lateral and vertical ordered structure. In addition, this sample exhibits strong 1.55 µm photoluminescence (PL) emission at room temperature.