Impact of high-temperature rapid thermal
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Akihiro Shimizu; Nagatoshi Ohki; Hiroshi Ishida; Toshiaki Yamanaka; Ken-Ichi Kik
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Article
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1996
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John Wiley and Sons
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English
β 687 KB
We investigated the impact of high-temperature rapid thermal annealing (HT-RTA) for CMOSFET design in the deep-submicrometer regime. HT-RTA (>lo00 "C) carried out immediately after ion implantation can reduce the transient enhanced diffusion of implanted impurities and suppress interactions between