Type II recombination and band offset determination in a tensile strained InGaAs quantum well
β Scribed by Lugand, C.; Benyattou, T.; Guillot, G.; Venet, T.; Gendry, M.; Hollinger, G.; Sermage, B.
- Book ID
- 118217489
- Publisher
- American Institute of Physics
- Year
- 1997
- Tongue
- English
- Weight
- 372 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.119140
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Single quantum wells (SQWs) of GaAs 3 nm thick between wide AlAs confining layers were studied by scanning electron microscope cathodoluminescence (CL) and high resolution transmission electron microscopy (HREM). It was found that the CL emission band changed from a single gaussian owing to the indi
We determine the energy band offsets in GaAs/AlxGal\_xAs and GaSb/AlxGal\_xSb quantum wells with a new light-scattering method. We measure electronic intersubband transitions in the conduction band of the quantum wells, and use this information to deduce the conduction band discontinuity AEe. The li