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Two types of neutral electron traps generated in the gate silicon dioxide

✍ Scribed by Wei Dong Zhang; Zhang, J.F.; Lalor, A.; Burton, D.; Groeseneken, G.V.; Degraeve, R.

Book ID: 114616888
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 480 KB
Volume: 49
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2002.804709

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