A two-step annealing process for Ni sili
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Chang-Geun Ahn; Tae-Youb Kim; Jong-Heon Yang; In-Bok Baek; Won-ju Cho; Seongjae
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Article
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2008
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Elsevier Science
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English
โ 575 KB
A two-step annealing process for Ni silicide formation in an ultra-thin body (UTB) RF SOI MOSFET is proposed to prevent a dramatic increase of the gate leakage current from the in-diffusion of Ni into the channel. The first step of the annealing process was performed at a low temperature for di-nick