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Two-layer resist structure for electron-beam fabrication of a submicrometer gate length GaAs device

✍ Scribed by Kato, T.; Hayashi, K.; Sasaki, Y.

Book ID: 114595931
Publisher: IEEE
Year: 1987
Tongue: English
Weight: 848 KB
Volume: 34
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1987.22992

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