Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

✍ Scribed by Chung-Kuang Huang; Zhang, W.E.; Yang, C.H.

• Book ID: 114537233
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 225 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.662789