Two dimensional Monte Carlo simulation o
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R. Fauquembergue; M. Pernisek; E. Constant
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Article
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1985
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Elsevier Science
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Theoretical studies of injection FETs having a vertical symmetric structure enabled the determination of an optimal structure (I), characterised by a transconductance of 900 mS/mm and a gain bandwidth product of 250 Ghz. The major problem of this submicron device is the breakdown of the Schottky bar