Two dimensional Monte Carlo simulation of an injection modulated M.I.S.F.E.T. structure

✍ Scribed by R. Fauquembergue; M. Pernisek; E. Constant

• Book ID: 103889136
• Publisher: Elsevier Science
• Year: 1985
• Weight: 223 KB
• Volume: 129
• Category: Article
• ISSN: 0378-4363
• DOI: 10.1016/0378-4363(85)90645-x

✦ Synopsis

Theoretical studies of injection FETs having a vertical symmetric structure enabled the determination of an optimal structure (I), characterised by a transconductance of 900 mS/mm and a gain bandwidth product of 250 Ghz. The major problem of this submicron device is the breakdown of the Schottky barrier and the leakage current through the gate. To circumvent this inconvenience an insulating layer is inserted between the gate and the conducting channel. We simulated this novel structure of MISFET type and we present here a study of the influence of various insulator characteristics on device performance that might be expected.