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Two-dimensional analysis of emitter resistance in the presence of interfacial oxide breakup in polysilicon emitter bipolar transistors

โœ Scribed by Hamel, J.S.; Roulston, D.J.; Selvakumar, C.R.; Booker, G.R.


Book ID
114534722
Publisher
IEEE
Year
1992
Tongue
English
Weight
881 KB
Volume
39
Category
Article
ISSN
0018-9383

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