## Abstract Hall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures
Tunneling Spectroscopy and Vortex Imaging in Boron-Doped Diamond
✍ Scribed by Sacépé, B.; Chapelier, C.; Marcenat, C.; Kačmarčik, J.; Klein, T.; Bernard, M.; Bustarret, E.
- Book ID
- 118001641
- Publisher
- The American Physical Society
- Year
- 2006
- Tongue
- English
- Weight
- 711 KB
- Volume
- 96
- Category
- Article
- ISSN
- 0031-9007
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The electron emission from a diamond surface is influenced by the surface termination and the surface density of states. It is known that the hydrogen termination of diamond surfaces induces ptype conduction. Scanning tunneling spectroscopy (STS), combined with high-resolution topographical imaging
## Abstract Hot filament chemically vapor deposited (HFCVD) boron doped diamond films were grown on monocrystalline silicon (111) doped with B/C ratios of 4000, 8000 and 12,000 ppm. Scanning electron micrographs show that the films are composed of well‐faceted microcrystallites ranging in size from