Pressure induced Γ−Γ to Γ-X tunneling cr
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K. Zekentes; J.-M. Mercy; J.-L. Robert; Z. Hatzopoulos; A. Christou
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Article
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1991
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Elsevier Science
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English
⚖ 224 KB
The I-V characteristics of a GaAs/GaA1As based heterostructure have been investigated under hydrostatic pressure up to 14 Kbars and varying temperature between 300K and 108K. In the high temperature range, thcrmionic emission is the dominant current mechanism while, at low temperature, mnnefing beco