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Tunneling in AlGaAs by Γ-X scattering

✍ Scribed by Peter J. Price


Book ID
118362460
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
414 KB
Volume
196
Category
Article
ISSN
0039-6028

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The I-V characteristics of a GaAs/GaA1As based heterostructure have been investigated under hydrostatic pressure up to 14 Kbars and varying temperature between 300K and 108K. In the high temperature range, thcrmionic emission is the dominant current mechanism while, at low temperature, mnnefing beco