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Pressure induced Γ−Γ to Γ-X tunneling crossover in GaAlGaAlAs heterostructures

✍ Scribed by K. Zekentes; J.-M. Mercy; J.-L. Robert; Z. Hatzopoulos; A. Christou

Book ID: 103918743
Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 224 KB
Volume: 10
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(91)90151-g

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✦ Synopsis

The I-V characteristics of a GaAs/GaA1As based heterostructure have been investigated under hydrostatic pressure up to 14 Kbars and varying temperature between 300K and 108K. In the high temperature range, thcrmionic emission is the dominant current mechanism while, at low temperature, mnnefing becomes more important. At low applied pressures, the results are well explained considering a F-F configuration and the effect of the pressure on the barrier height. For pressures above 8 Kbars, we observe a clear change in the transmission of electrons due to the change to a F-X configuration.

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