Tunneling-assisted optical transitions in GaAs delta-doped superlattices
β Scribed by V.L. Alperovich; A.S. Jaroshevich; D.I. Lubyshev; V.P. Migal
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 328 KB
- Volume
- 175
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
β¦ Synopsis
Optical transitions in delta-doped "sawtooth" n-i-p-i superlattices with various periods are studied experimentally in this paper by photocurrent (PC) and photoreflectance (PR) spectroscopy. The exponential tail of the PC below the band gap eg and oscillations of the PR above eg are due to the Franz-Keldysh effect caused by the homogeneous built-in electric field E in the superlattice. When the period of the superlattices decreases, a monotonic increase of the low-energy wing length and of the above-band gap oscillation period is observed, due to the rise of E. Not only superlanice built-in electric fields but also weaker fields of the buffer layers contribute to the PR spectra. It is shown that different contributions to the PR can be separated experimentally using different lifetimes of the photogenerated electrons and holes. The analogy between the Franz-Keldysh effect in semiconductors and the total reflection of light in optics is discussed.
π SIMILAR VOLUMES
An additional interband tunnelling peak in delta doped p-n junction is observed. The peak appears at voltages that correspond to the alignment of the delta-layer energy level with an energy in the range from quasi-Fermi level to the top of the valence band of the p Γ· -region. Our results show that t
The transition between chaotic and periodic regimes in spontaneous current oscillations of weakly coupled, doped GaAs/AlAs superlattices has been observed by varying the external d.c. bias. The chaotic current oscillations are observed for voltage ranges, which exhibit a large negative differential