Resonant tunnelling effect in delta doped p-n GaAs junction

✍ Scribed by S.A. Vitusevich; A. Förster; A.E. Belyaev; K.M. Indlekofer; H. Lüth; R.V. Konakova

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 259 KB
• Volume: 46
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00055-6

✦ Synopsis

An additional interband tunnelling peak in delta doped p-n junction is observed. The peak appears at voltages that correspond to the alignment of the delta-layer energy level with an energy in the range from quasi-Fermi level to the top of the valence band of the p ÷ -region. Our results show that the voltage position of the additional peak considerably depends on the temperature, electrical and magnetic fields with higher switching parameters in comparison to the conventional tunnelling peak. Our findings might be useful for the design of new microwave and fast digital devices.