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Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

โœ Scribed by Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

Book ID
120383609
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
1022 KB
Volume
102
Category
Article
ISSN
0003-6951

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InGaN/GaN self-organized quantum dots with density of (2 ร€ 5) ร‚ 10 10 cm ร€ 2 , internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristic