Tuning of the optical properties of [11k] grown InAs quantum dots by the capping layer
β Scribed by V. Mlinar; F.M. Peeters
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 274 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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π SIMILAR VOLUMES
The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvemen
Eight-band k.p theory including strain and piezoelectric effects are employed to calculate the strain distribution and electron and hole energy levels of InAs/GaAs quantum dots grown on [11k] substrates in the presence of an external magnetic field. Height of the dot determines how the increasing of