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Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

โœ Scribed by Shi, Zhan; Simmons, C. B.; Prance, J. R.; King Gamble, John; Friesen, Mark; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.


Book ID
120992010
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
776 KB
Volume
99
Category
Article
ISSN
0003-6951

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Top-gated few-electron double quantum do
โœ Nakul Shaji; Christine B. Simmons; Levente J. Klein; Hua Qin; Donald E. Savage; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 556 KB

A few-electron quantum dot utilizing Schottky, metal top gates in a modulation doped Si/SiGe heterostructure was realized and nonlinear transport through the dot was studied. By carefully tuning the capacitively coupled gates, the single quantum dot was transformed into two tunnel-coupled quantum do