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Top-gated few-electron double quantum dot in Si/SiGe

✍ Scribed by Nakul Shaji; Christine B. Simmons; Levente J. Klein; Hua Qin; Donald E. Savage; M.G. Lagally; Susan N. Coppersmith; Robert Joynt; Mark Friesen; Robert H. Blick; Mark A. Eriksson

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 556 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.07.028

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✦ Synopsis

A few-electron quantum dot utilizing Schottky, metal top gates in a modulation doped Si/SiGe heterostructure was realized and nonlinear transport through the dot was studied. By carefully tuning the capacitively coupled gates, the single quantum dot was transformed into two tunnel-coupled quantum dots in series. The resulting double quantum dot was tuned to the few-electron regime and the charge stability diagram was studied as a function of the gate voltages. Understanding of such a double dot system is essential for the practical implementation of exchange-mediated multi-qubit systems in silicon devices.

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