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Trap saturation in ZnIn2S4

✍ Scribed by D. Crandles; S. Charbonneau; E. Fortin; A. Anedda


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
320 KB
Volume
56
Category
Article
ISSN
0038-1098

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The only member of the IIΒ±III 2 Β±VI 4 semiconductor family with layered structure is ZnIn 2 S 4 . At ambient conditions several polytypes of this compound have been reported. Energy dispersive X-ray diffraction of ZnIn 2 S 4 has been realized at high pressure up to 18 GPa. The structure of this poly