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Structure of IIIa-ZnIn2S4 under High Pressure

✍ Scribed by T. Tinoco; A. Polian; J. P. Itié; S. A. López

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
132 KB
Volume
211
Category
Article
ISSN
0370-1972

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✦ Synopsis

The only member of the II±III 2 ±VI 4 semiconductor family with layered structure is ZnIn 2 S 4 . At ambient conditions several polytypes of this compound have been reported. Energy dispersive X-ray diffraction of ZnIn 2 S 4 has been realized at high pressure up to 18 GPa. The structure of this polytype III a -ZnIn 2 S 4 is rhombohedral with space group R3m. It consists of a close-packed arrangement of S atoms, with Zn and half of the In atoms randomly distributed on tetrahedral sites, and the other half of the In atoms located on octahedral sites. The hexagonal axes are a (3.873 AE 0.002) # e and c (37.067 AE 0.004) # e (V 482 # e 3 , Z 3). No phase transition has been observed between 0 and 18 GPa. The bulk modulus, obtained by fitting the data to a first-order Murnaghan equation of state is B (82 AE 8) GPa.

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