Transport properties of structures containing a-Si : H : Er
β Scribed by D. Dimova-Malinovska; M. Sendova-Vassileva; R. Northcott; J. M. Marshall
- Book ID
- 111556855
- Publisher
- Springer US
- Year
- 2003
- Tongue
- English
- Weight
- 83 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0957-4522
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π SIMILAR VOLUMES
Non-Gaussian photoluminescence peaks observed in a-Si:H-based structures at 6 K are interpreted as a consequence of the presence of different phases in material. Thin films of amorphous silicon deposited on glass substrate have been analyzed. The main aims of the contribution are (i) analysis of nu
We present dark conductivities and photoconductivities of compositional superlattices (SL) with a-Si:H,F barrier and a-Si,Ge:H,F well layers measured parallel and perpendicular to the plane of the layers. The optical absorption spectra, photogenerated hole collection and electron drift data in these