๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Transport properties of LPCVD a-Si:H solar cells

โœ Scribed by Steven S. Hegedus


Book ID
118332696
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
207 KB
Volume
66
Category
Article
ISSN
0022-3093

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


High-forward-bias transport mechanism in
โœ Schulze, T. F. ;Korte, L. ;Conrad, E. ;Schmidt, M. ;Rech, B. ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 461 KB

## Abstract In order to elucidate the transport mechanism in aโ€Si:H/cโ€Si heterojunction solar cells under high forward bias (__U__โ€‰>โ€‰0.5โ€‰V), we conducted temperatureโ€dependent measurements of currentโ€“voltage (__I__โ€“__V__) curves in the dark and under illumination. ZnO:Al/(p)aโ€Si:H/(__n__)cโ€Si/(n^+^

Charge transport in a-Si: H PIN solar ce
โœ P. Garikepati; T. Xue ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 354 KB

We have made I-V and impedance measurements on a-Si : H PIN solar cells as a function of the frequency and bias voltage to understand the mechanisms that limit the charge transport under AC excitation. The measurements covered the range of frequencies from 1 Hz to 1 MHz. It is concluded that the int