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Charge transport in a-Si: H PIN solar cells under AC excitation

✍ Scribed by P. Garikepati; T. Xue

Book ID
103964921
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
354 KB
Volume
27
Category
Article
ISSN
0927-0248

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✦ Synopsis

We have made I-V and impedance measurements on a-Si : H PIN solar cells as a function of the frequency and bias voltage to understand the mechanisms that limit the charge transport under AC excitation. The measurements covered the range of frequencies from 1 Hz to 1 MHz. It is concluded that the interaction between gap states and extended states rather than the band transport is the limiting mechanism on the charge transport.

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## Abstract In order to elucidate the transport mechanism in a‐Si:H/c‐Si heterojunction solar cells under high forward bias (__U__ > 0.5 V), we conducted temperature‐dependent measurements of current–voltage (__I__–__V__) curves in the dark and under illumination. ZnO:Al/(p)a‐Si:H/(__n__)c‐Si/(n^+^