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Transport properties of silicon nanostructures fabricated on SIMOX substrates

✍ Scribed by Katsumi Murase; Yasuo Takahashi; Yasuyuki Nakajima; Hideo Namatsu; Masao Nagase; Kenji Kurihara; Kazumi Iwadate; Seiji Horiguchi; Michiharu Tabe; Katsutoshi Izumi


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
531 KB
Volume
28
Category
Article
ISSN
0167-9317

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Fabrication of densely packed arrays of
✍ F.Y. Shih; A. Kobayashi; S. Inoue; J. Ohta; H. Fujioka πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 588 KB

We have grown GaN on patterned Si (1 1 0) substrates prepared using a nano-imprinting technique and investigated the influence of growth temperature and the nano-pattern on the morphology of the nanostructure. Although {1 1 Β―0 2} facets were preferentially formed as sidewalls at a growth temperature