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Transport properties of heterostructures based on GaSb, InAs and InSb on GaAs substrates

✍ Scribed by P.N. Uppal; D.M. Gill; S.P. Svensson; D.C. Cooke


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
423 KB
Volume
111
Category
Article
ISSN
0022-0248

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Semimetallic InAs/GaSb structures are known to contain simultaneously both two dimensional electrons in the InAs and two dimensional holes in the GaSb layers. Following successful anodisation of undoped \(\mathrm{GaSb}\), we describe transport measurements performed on a wide area gated sample and a