One dimensional transport and gating of InAs/GaSb structures

✍ Scribed by Y. Chen; D.M. Symons; M. Lakrimi; A. Salesse; G.B. Houston; R.J. Nicholas; N.J. Mason; P.J. Walker

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 175 KB
• Volume: 15
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1994.1009

✦ Synopsis

Semimetallic InAs/GaSb structures are known to contain simultaneously both two dimensional electrons in the InAs and two dimensional holes in the GaSb layers. Following successful anodisation of undoped (\mathrm{GaSb}), we describe transport measurements performed on a wide area gated sample and also a single quantum point contact. In the large area gated sample, the electron density increases and the hole density decreases when a positive gate voltage is applied. Under negative bias, an additional layer of holes is created at the interface between the insulating and (\mathrm{GaSb}) capping layers, which is confirmed by self-consistent modelling of the band profile under external bias. The conductance of the point contact is found to exhibit quantised values.