Transport Phenomena of YB41Si1.2

✍ Scribed by Yoshio Ishizawa; Takaho Tanaka

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 100 KB
• Volume: 154
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.2000.8840

✦ Synopsis

YB 41 Si 1.2 was grown by a 6oating zone method with infrared heating. The crystal structure of YB 41 Si 1.2 belongs to the orthorhombic system. The electrical resistivity, the Hall coe7cient, and the Seebeck coe7cient have been investigated from liquid nitrogen temperature to room temperature. The temperature dependence of the electrical resistivity was expressed as exp[(T 0 /T ) 1/4 ] and indicates semiconductive nature. The Hall mobility was estimated to an order of 0.1 cm 2 / V s or lower. The combined data of the Hall mobility and the electrical resistivity indicates that electrical conduction is not of the band conduction type but of hopping type. The Seebeck coe7cient is almost temperature independent between 110 and 290 K with a value of about 180 V/ K. For temperatures lower than 110 K, the Seebeck coe7cient decreases rapidly with decreasing temperature. The 5gure of merit of the thermoelectric conversion of YB 41 Si 1.2 was estimated and discussed using present data. 2000 Academic Press