Transport Phenomena of YB41Si1.2
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Yoshio Ishizawa; Takaho Tanaka
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Article
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2000
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Elsevier Science
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English
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YB 41 Si 1.2 was grown by a 6oating zone method with infrared heating. The crystal structure of YB 41 Si 1.2 belongs to the orthorhombic system. The electrical resistivity, the Hall coe7cient, and the Seebeck coe7cient have been investigated from liquid nitrogen temperature to room temperature. The