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Transport phenomena in amorphous silicon doped by ion implantation of 3d metals

✍ Scribed by Dvurechenskii, A. V. ;Dravin, V. A. ;Ryazantsev, I. A. ;Kh. Antonenko, A. ;Landochkin, I. G.

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 393 KB
Volume: 95
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210950233

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