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Transparent flexible resistive random access memory fabricated at room temperature

✍ Scribed by J. Won Seo; J. Park; K. S. Lim; S. J. Kang; Y. H. Hong; J. H. Yang; L. Fang; G. Y. Sung; H. Kim

Book ID: 126600975
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 589 KB
Volume: 95
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3242381

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## Abstract We successfully fabricated perovskite oxide‐based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high‐pressure oxygen‐annealed (HPOA) W/Al/Pr~0.7~Ca~0.3~MnO~3~ (PCMO)/Pt device shows good memory characteristics such as