Abstract
Cuprous iodide (CuI) thin films were prepared by a pulsed laser deposition (PLD) technique, and the effects of the laser energy and substrate temperature on the structure and opticalβelectrical properties were investigated by Xβray diffraction (XRD), scanning electronic microscopy (SEM), transmittance spectra, and resistivity measurements. At a substrate temperature of room temperature (RT), thin films include highly crystallized and (111)βorientation preferred Ξ³βCuI and trace I~2~O~5~ phases, and have resistivity of the order of 10^β1^βΞ©βcm, average transmittance of about 80% at 410β1000βnm, and the bandgap (E~g~) of 3.01βeV at different laser energies. At the same laser energy of 250βmJ/pulse, phase structure, and E~g~ of the films are uniform as substrate temperature increases to 350βΒ°C, but the resistivity increases to the order of 1βΞ©βcm and the average transmittance decreases to 60%; the structure and properties of the films completely change as substrate temperature increases to 500βΒ°C. The XRD and transmittance spectra analysis indicate that rudimental oxygen is introduced into CuI thin films, which results in obviously lower resistivity than that of the previously reported value (10^3^βΞ©βcm). These results imply that the prepared CuI films exhibit excellent transparent conductive properties and can be used in solar cells.