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Transmission-mode GaN photocathode based on graded AlxGa1?xN buffer layer

✍ Scribed by Xiaoqing Du, 杜晓晴; Benkang Chang, 常本康; Yunsheng Qian, 钱芸生; Pin Gao, 高频

Book ID
115368984
Publisher
Optics InfoBase
Year
2011
Tongue
English
Weight
450 KB
Volume
9
Category
Article
ISSN
1671-7694

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Improvement of breakdown characteristics
Improvement of breakdown characteristics in AlGaN/GaN/AlxGa1−xN HEMT based on a grading AlxGa1−xN buffer layer
✍ Yu, Hongbo ;Lisesivdin, Sefer B. ;Bolukbas, Basar ;Kelekci, Ozgur ;Ozturk, Musta 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 381 KB

## Abstract To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al~__x__~Ga~1−__x__~N double heterostructure (DH‐HEMTs) were designed and fabricated by replacing the semi‐insulating GaN buffer with content