Transmission electron microscopy characterization of a fluorine-doped Si3N4
โ Scribed by H. -J. Kleebe; G. Pezzotti; T. Nishida
- Publisher
- Springer
- Year
- 1995
- Tongue
- English
- Weight
- 474 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0261-8028
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
A high resolution transmission electron microscopy study of fluorine-intercalated carbon fibers has been carried out on two types of host materials: high-temperature treated pitch-based and PANbased fibers. TEM images and corresponding Fourier transforms have shown that only stage-l compounds and g
Be ions were implanted into degenerately Si-doped GaAs at 300 keV to a dose of 10 15 cm ร2 . The region near the projected range remained crystalline, and subthreshold defects formed at this depth after annealing at 450-500 C. The defects are identified as circular prismatic perfect interstitial loo