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Transition from strong to weak localization in the split-off impurity band in two-dimensionalp-GaAs/AlGaAs structures

✍ Scribed by N. V. Agrinskaya; V. I. Kozub; D. V. Poloskin; A. V. Chernyaev; D. V. Shamshur

Book ID
110139923
Publisher
SP MAIK Nauka/Interperiodica
Year
2004
Tongue
English
Weight
78 KB
Volume
80
Category
Article
ISSN
0021-3640

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Crossover from strong to weak localizati
Crossover from strong to weak localization in the split-off impurity band in two-dimensional p -GaAs/AlGaAs structures
✍ N. V. Agrinskaya; V. I. Kozub; D. V. Poloskin; A. V. Chernyaev; D. V. Shamshur 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 219 KB

## Abstract A crossover from strongly localized behavior to weak localization (SL–WL) was observed in two‐dimensional modulation‐doped GaAs/Al~0.3~Ga~0.7~As structures as the impurity concentration increased. The low‐temperature dependence of the conductivity changed its character (from exponential