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Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas

✍ Scribed by A. A. Sherstobitov; G. M. Minkov; O. É. Rut; A. V. Germanenko; B. N. Zvonkov; E. A. Uskova; A. A. Biryukov

Book ID: 110134731
Publisher: Springer
Year: 2003
Tongue: English
Weight: 73 KB
Volume: 37
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1582539

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## Abstract A crossover from strongly localized behavior to weak localization (SL–WL) was observed in two‐dimensional modulation‐doped GaAs/Al~0.3~Ga~0.7~As structures as the impurity concentration increased. The low‐temperature dependence of the conductivity changed its character (from exponential