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Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy

✍ Scribed by Sezen, Hikmet; Ozbay, Ekmel; Aktas, Ozgur; Suzer, Sefik


Book ID
111960166
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
919 KB
Volume
98
Category
Article
ISSN
0003-6951

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## Abstract X‐ray photoelectron spectroscopy (XPS) and Bremsstrahlung‐excited Auger electron spectroscopy (XAES) were used to study the surface composition and oxidation of silicon carbide platelets which had been heated in air at 500–800Β° C. The surface oxide thickness for each heating time and te