𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs

✍ Scribed by Onoda, Shinobu; Iwamoto, Naoya; Ono, Shuich; Katakami, Shuji; Arai, Manabu; Kawano, Katsuyasu; Ohshima, Takeshi


Book ID
121237051
Publisher
IEEE
Year
2009
Tongue
English
Weight
239 KB
Volume
56
Category
Article
ISSN
0018-9499

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Study of charge collection efficiency in
✍ M. De Napoli; F. Giacoppo; G. Raciti; E. Rapisarda πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 363 KB

The Charge Collection Efficiency (CCE) in 4H-SiC epitaxial Schottky diodes is studied as a function of the applied reverse bias. Three SiC types, with different doping concentrations, were used to detect 12 C ions at 14.2, 28.1 and 37.6 MeV. In two SiC types we observe minority charge carriers, gene