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Transient photoconduction of β rhombohedral bulk boron

✍ Scribed by Ryosei Uno; Shin-Ichi Tanabe; Haruo Ozawa

Book ID
116014040
Publisher
Elsevier Science
Year
1981
Weight
210 KB
Volume
82
Category
Article
ISSN
0022-5088

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Carrier transport properties in amorphous and -rhombohedral boron were studied by the time of flight method. The activation energy for holes in -rhombohedral boron was estimated to be 240 meV. This activation energy corresponds to the depth of hole traps originating from B 12 , that is, the intrinsi