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Transient photoconduction of β-rhombohedral boron(II)

✍ Scribed by Ryosei Uno; Haruo Ozawa

Book ID
116015563
Publisher
Elsevier Science
Year
1986
Weight
242 KB
Volume
117
Category
Article
ISSN
0022-5088

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The transient photoconduction of -rhombohedral boron was analyzed within the framework of the band theory. Since the dielectric relaxation time was shorter than observed time, the longitudinal photocurrent was analyzed on the condition that the carrier injection from the irradiated electrode was all

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Carrier transport properties in amorphous and -rhombohedral boron were studied by the time of flight method. The activation energy for holes in -rhombohedral boron was estimated to be 240 meV. This activation energy corresponds to the depth of hole traps originating from B 12 , that is, the intrinsi