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Topological Interaction of Shallow-Level Centers with Dislocations in Semiconductors

✍ Scribed by Y.T. Rebane

Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 123 KB
Volume: 210
Category: Article
ISSN: 0370-1972
DOI: 10.1002/(sici)1521-3951(199812)210:2<269::aid-pssb269>3.0.co;2-9

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✦ Synopsis

Topological interaction of shallow impurities with dislocations is studied. This problem is related with the violation of the topological structure of the crystal lattice by dislocations. The interaction results in a topological gauge field that is confined inside the dislocation cores but influences the shallow impurity states in vicinity of the dislocations via an Aharonov-Bohm effect-like way. It is found that this effect reduces the binding energies of shallow centers localized at unsplit dislocations. For split dislocations, the interaction of shallow-level centers with the stacking faults existing between partials is important and is taken into account on the base of the d-potential quantum well model of the stacking faults.

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