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Topological Insulator Thin Films of Bi2Te3 with Controlled Electronic Structure

✍ Scribed by Guang Wang; Xie-Gang Zhu; Yi-Yang Sun; Yao-Yi Li; Tong Zhang; Jing Wen; Xi Chen; Ke He; Li-Li Wang; Xu-Cun Ma; Jin-Feng Jia; Shengbai B. Zhang; Qi-Kun Xue

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
831 KB
Volume
23
Category
Article
ISSN
0935-9648

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Structural and Electrical Properties of
Structural and Electrical Properties of Annealed In–Bi2S3Thin Films
✍ R.SuΓ‘rez Parra; P.J. George; A.E. JimΓ©nez-Gonzalez; L. BaΓ±os; P.K. Nair πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 321 KB

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In