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Topological and Variational Properties of a Model for

✍ Scribed by Giovanni Bellettini; Valentina Beorchia; Maurizio Paolini


Book ID
106389950
Publisher
Springer US
Year
2008
Tongue
English
Weight
973 KB
Volume
32
Category
Article
ISSN
0924-9907

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πŸ“œ SIMILAR VOLUMES


A variational model for transistors
✍ A. Martinez; M. Lozano; J. Barquillas; A. Carlosena πŸ“‚ Article πŸ“… 1987 πŸ› Elsevier Science 🌐 English βš– 417 KB

This paper presents a linear variational model for transistors in their typical amplifying region, valid for BJTs as well as FETs. The model allows one to determine the most important parameters of analog electronic systems: small-signal behaviour, thermal drift and effects of device mismatches.