𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Topography and crystallography of a Pt film on a Cu buffer layer and a Si(111)(7 × 7) substrate

✍ Scribed by Masahiko Yamamoto; Kouichi Nishikawa; Toshiki Kingetsu; Toshimitu Kurumizawa; Kenji Kusao

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
378 KB
Volume
67
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High Quality GaN Layers on Si(111) Subst
High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer
✍ Hageman, P.R. ;Haffouz, S. ;Kirilyuk, V. ;Grzegorczyk, A. ;Larsen, P.K. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 91 KB 👁 2 views

We present a study on the material properties of GaN films grown on (111) silicon substrates by low-pressure metalorganic chemical vapour deposition using AlN buffer layers. This buffer layer is optimised with respect to growth temperature and time for the optical and structural properties of the Ga