Synthesis of New Liquid Mixed Sr–Ta and
Synthesis of New Liquid Mixed Sr–Ta and Sr–Nb Alkoxides as CVD Precursors for Metal Oxide Thin Films
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H. Kadokura; Y. Okuhara; M. Mitsuya; H. Funakubo
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Article
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2000
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John Wiley and Sons
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English
⚖ 238 KB
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tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 ´10 ±8 A cm ±2 for an electric field strength of 2 MV cm ±1 , and a breakdown voltage